Thermoelectric and Electrical Measurements in the Er‐Se System

摘要

An evaluation of the electrical conductivity and thermoelectric power for compounds in the Er‐Se system shows that they are degenerate semiconductors. In order to explain the observations in the intrinsic region the number of carriers must be considered as a function of the concentration of the erbium atoms in the compound. Two temperature‐dependent processes take place; the activation of impurity levels and the high‐temperature activation of localized energy levels associated with the number of erbium atoms present.