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Influence of Charged Defects on Mechanical Properties of Lead Sulfide

机译:带电缺陷对硫化铅力学性能的影响

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摘要

A chemical etch, suitable for revealing dislocation etch pits on cleaved crystals of PbS, has been utilized to reveal rosette patterns formed upon indentation of specimens whose charge‐carrier concentration had been fixed by high‐temperature equilibration in controlled sulfur pressure. Hardness and rosette wing length are nearly independent of concentration of free electrons in the range 2×1017 to 3×1019 cm-3. This is true for n‐type material prepared by introduction of an excess of lead or by addition of a high concentration of bismuth donors to the PbS. Similar measurements on p‐type, sulfur excess crystals, pure or containing silver as an acceptor addition, reveal a marked dependence of hardness and wing length on concentration of holes. For hole concentrations above 8×1017 cm-3, rapid hardening is observed with an attendant decrease in rosette size. It is suggested that this behavior results from an electrostatic interaction between charged dislocations and acceptor point defects.
机译:化学刻蚀适合揭示PbS裂解晶体上的位错刻蚀坑,已被用来揭示在压痕样品上形成的玫瑰花样图案,这些样品的载流子浓度已通过在受控硫压下的高温平衡而固定。硬度和花环的翼长几乎与2×1017至3×1019 cm-3范围内的自由电子浓度无关。对于通过向PbS中引入过量的铅或添加高浓度的铋供体而制备的n型材料来说,情况确实如此。对p型,硫过量的晶体(纯的或含银的受主添加物)进行的类似测量显示,硬度和机翼长度对孔的浓度有明显的依赖性。对于高于8×1017 cm-3的孔浓度,观察到快速硬化,伴随着玫瑰花结尺寸的减小。建议该行为是由带电位错和受体点缺陷之间的静电相互作用引起的。

著录项

  • 来源
    《Journal of Applied Physics》 |1966年第13期|共5页
  • 作者

    Seltzer Martin S.;

  • 作者单位

    Battelle Memorial Institute, Columbus Laboratories, Columbus, Ohio;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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