Theoretical Study of Gunn Domains and Domain Avalanching

摘要

Theoretical studies of the characteristics of Gunn domains have been conducted, using the simplifying assumption that the domain is invariant after its initial formation. This assumption greatly simplifies the calculation, allowing a high degree of accuracy in the solution. The solution involves the use of the most recent experimentally derived velcoity‐field and diffusion‐field characteristics of the carriers. Calculations in the resistivity range 0.1–10 Ωcm are presented. Using this detailed solution of the domain characteristics and data for the ionization coefficient for avalanching, which are available from experimental and theortical studies the domain potentials required for avalanching have been determined as a function of material characteristics. Two types of calculations have been carried out to predict avalanching within the domain. The first type of calculation is applicable to avalanching occurring in a time comparable to the time required for the domain to drift one domain width. The second type of calculation is directed toward avalanching occurring when a domain drifts for much longer periods of time, including multiple transits through a sample.