Electroluminescence in Liquid‐Phase Epitaxial GaSb Diodes

摘要

Electroluminescence in GaSb liquid‐phase epitaxial diodes has been studied. Optical and electrical measurements were done between 65° and 300°K. Two emission bands are observed, which are both due to transitions between the conduction band and different acceptor levels. The peak photon energy of band I is stationary with applied voltage and is due to a thermal injection mechanism. The low‐energy band II shifts with applied voltage and is described by theories of photon‐assisted tunneling. It is demonstrated that for both emission bands the intensities and peak photon energies are directly related to the applied voltage.