Recombination instabilities in semiconductors doped with deep two‐level traps

摘要

This paper presents a general theory of the recombination‐wave diode, i.e., of a bulk semiconductor doped with deep two‐level traps. Such theory includes other proposed models as particular cases. The range of validity of such models is discussed. The high‐frequency carrier lifetimes are compared with the dc lifetimes and with experimental values on gold‐doped silicon. A limiting condition to obtain oscillations is determined on the semiconductor doping. The theoretical results concerning the oscillation frequency and the threshold voltage are compared with experimental data on gold‐doped silicon.