Surface barrier energies on strontium titanate

摘要

The metal‐semiconductor surface‐barrier systems consisting of the metals gold, palladium, copper, or indium on chemically prepared or cleaved strontium titanate surfaces have been investigated in detail. Surface‐barrier energies have been studied by photoresponse, forward current versus voltage, and thermal activation energy techniques yielding values in excellent agreement with each other. Forward current‐voltage characteristics were in quantitative agreement with simple diode thermionic theory as modified by the inclusion of image force lowering. The reverse current‐voltage characteristic of these stable barriers also is in agreement with that expected from thermionic theory including simple image force lowering over a bias range from -0.1 to -4 V.