Erratum: Preparation, microstructure, and high‐field superconducting properties of Nb3 Sn doped with group‐III, ‐IV, ‐V, and ‐VI elements

Enstrom Ronald E.; Appert John R.

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Erratum: Preparation, microstructure, and high‐field superconducting properties of Nb3 Sn doped with group‐III, ‐IV, ‐V, and ‐VI elements

机译：勘误：掺有III，VI，VI和VI族元素的Nb3 Sn的制备，微观结构和高场超导性能

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来源
《Journal of Applied Physics》 |1972年第10期|共1页
作者
Enstrom Ronald E.; Appert John R.;
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作者单位

RCA Laboratories, Princeton, New Jersey 08540;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
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2. Preparation and Thermoelectric Properties of Zn‐Doped Sn‐Based Type‐VIII Single‐Crystalline Clathrate via a Grey Sn‐Flux Method [J] . Shen Lanxian, Li Decong, Deng Shuping, Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2018,第2期

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3. Superconducting Properties of Nb3 (Al, Ge) Prepared by Vacuum Vapor Deposition of the Elements [J] . Journal of Applied Physics . 1972,第5期

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4. Preparation and thermoelectric properties of A/sub 8//sup II/B/sub 16//sup III/B/sub 30//sup IV/ clathrate compounds [C] . Kuznetsov, V.I., Kuznetsova, . 1999

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5. First principles calculation of material properties of group IV elements and III-V compounds. [D] . Malone, Brad Dean. 2012

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6. Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping [O] . Getnet Kacha Deyu, Jonas Hunka, Hervé Roussel, 2019

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7. Microstructure and superconducting properties of Sn–In and Sn–In–Bi alloys as Pb-free superconducting solders [O] . T Mousavi, C Aksoy, C R M Grovenor, 2015

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8. Relativistic Electronic Structure and Superconductivity of Nb3 Ge, Nb3 Sn, and Nb3 Sb. [R] . Chen, S., Jansen, H. J. F., Freeman, A. J., 1987

机译：相对论电子结构和Nb3 Ge，Nb3 sn和Nb3 sb的超导电性。

Erratum: Preparation, microstructure, and high‐field superconducting properties of Nb3 Sn doped with group‐III, ‐IV, ‐V, and ‐VI elements

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