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Barkhausen noise power versus size of a minor hysteresis loop

机译:巴克豪森噪声功率与较小磁滞回线的大小的关系

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摘要

It has been observed that Barkhausen noise is quite low in the Rayleigh region and that it appears rather abruptly when the hysteresis loop departs from the Rayleigh region. These facts are explained in terms of the interaction between domain walls and crystalline defects. Only defects which have saturated (pressure independent of wall position) contribute to Barkhausen noise. The noise power is proportional to the cube of the defect strength. On a small minor hysteresis loop only weak defects saturate. Thus the noise is low. On large minor loops substantially all defects saturate, and the noise is high. The transition between the two cases is relatively abrupt. The noise is always small near the initial end of a branch of a loop of any size and reaches a maximum at the final end.
机译:已经观察到,巴克豪森噪声在瑞利区很低,并且当磁滞回线离开瑞利区时,它会突然出现。这些事实是根据畴壁和晶体缺陷之间的相互作用来解释的。只有饱和的缺陷(压力与壁的位置无关)会产生Barkhausen噪声。噪声功率与缺陷强度的立方成正比。在较小的磁滞回线上,只有弱缺陷会饱和。因此,噪声低。在较大的次循环中,基本上所有缺陷都饱和,并且噪声很高。两种情况之间的过渡是相对突然的。在任何大小的循环分支的起始端附近,噪声始终很小,并且在最终端达到最大值。

著录项

  • 来源
    《Journal of Applied Physics》 |1973年第10期|共4页
  • 作者单位

    College of Engineering, University of California, Santa Barbara, California 93106;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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