Solid‐liquid equilibria calculations for LPE of AlvGa1-u-vInuAs on InP

摘要

Detailed phase diagram calculations are presented for the quaternary AlvGa1-u-vInuAs alloys that are lattice matched to InP, and the experimental possibilities of growing AlGaInAs layers on InP by liquid‐phase epitaxy are discussed. The calculations indicate that there is a very large distribution coefficient for Al which will make LPE of AlGaInAs difficult.