Single‐crystal CdTe with low absorption at 10.6 μm for use as ir laser windows

摘要

Optimum conditions for the preparation of CdTe with minimum absorption at 10.6 μm are determined, paying attention both to type and concentration of dopants and the conditions of annealing. Doping with indium and annealing at 700 °C followed by quenching led to material with the smallest absorption coefficient at 10.6 μm of 8×10-4 cm-1.