Contactless monitoring of impurity activation in ion‐implanted silicon by surface acoustic wave techniques

摘要

The interaction between an implanted layer in silicon and a surface acoustic wave (SAW) traveling on a neighboring piezoelectric was studied, and the resulting transverse acoustoelectric voltage has been found to be an effective indicator of the activation of the implanted species in the silicon lattice obtained during annealing treatments following ion implantation. The method can be used to monitor an entire wafer and is nondestructive.