Electrical resistivity of the Kondo lattice

摘要

The electrical resistivity of the Kondo lattice is studied within the model of Lacroix and Cyrot1: In this model the Kondo fluctuations are described by a ficticious s.f. hybridization Jx/2, where x is determined self‐consistently. Thermal and spatial fluctuations of the parameter x are found to play an important role in the transport properties. At low temperatures the resistivity depends strongly on the conduction electron number n: We find for n≪1 a metallic behavior with a linear increase of the resistivity and a maximum at a temperature T1∼(1-n)1/3 TK. For n = 1 the resistivity is that of a semiconductor: π∼exp(TK/T). At higher temperature (above TK) the system may be treated as a collection of incoherent Kondo impurities and the resistivity exhibits a logarithmic decrease as can be expected.