Theoretical study of long‐wavelength laser operation in Ga1-xAlxAsySb1-y

摘要

A theoretical study is done on laser operation in Ga1-xAlxAsySb1-y which is lattice‐matched to GaSb. The strongly x‐dependent intervalence‐band absorption, the almost degenerate conduction‐band minima, and the nonradiative Auger recombination are major factors deteriorating the laser operation. The first two factors explain the observation that the threshold current rapidly increases with x. It is shown that the Ga1-xAlxAsySb1-y laser with an adequate value of x is promising as a long‐wavelength light source characterized by a weak temperature‐dependent and low threshold.