首页> 外文期刊>Journal of Applied Physics >Influencing factors and calculation of residual currents for modified metal‐oxide‐semiconductor devices covered with various silicone elastomers
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Influencing factors and calculation of residual currents for modified metal‐oxide‐semiconductor devices covered with various silicone elastomers

机译:各种有机硅弹性体覆盖的改性金属氧化物半导体器件的影响因素和剩余电流的计算

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摘要

An equation for the residual current induced by electric potential during charging of the gate electrode in modified transistors was derived by using electrical conductivity, Atalla’s model, and Ihantola’s equation for metal‐oxide‐semiconductor devices. The equation was examined by comparing calculated values with measured values of the residual current in a transistor covered with a silicone elastomer vulcanized by various reactions. Factors causing variations in hardness affect the electrical conductivity of the silicone elastomers. These are analyzed based on the vulcanization reaction system and the catalyst species.
机译:通过使用导电率,Atalla模型和Ihantola的金属氧化物半导体器件方程,得出了在改进的晶体管中对栅极充电期间由电势感应的剩余电流的方程。通过将计算值与在通过各种反应硫化的有机硅弹性体覆盖的晶体管中的剩余电流的测量值进行比较,检查方程式。引起硬度变化的因素影响硅氧烷弹性体的电导率。基于硫化反应体系和催化剂种类来分析这些。

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    《Journal of Applied Physics》 |1986年第3期|P.1087-1090|共4页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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