A multilayer AgGaS2 structure for infrared (2–10 μm) electro‐optic tunable filters: Fabrication and performance

摘要

Alternating layers of high‐ and low‐resistivity silver thiogallate (AgGaS2) were grown sequentially by liquid‐phase epitaxy on AgGaS2 substrates using the vertical dipping technique. High‐resistivity layers were grown by using KCl‐AgGaS2 solutions while low‐resistivity layers were grown from Ge‐AgGaS2‐KCl solutions. Layer growth of such a multilayer device and demonstration of its electro‐optic response for filter application are described.