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首页> 外文期刊>Journal of Applied Physics >Effects of media stray field on electromigration characteristics in current-perpendicular-to-plane giant magnetoresistance spin-valve read sensors
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Effects of media stray field on electromigration characteristics in current-perpendicular-to-plane giant magnetoresistance spin-valve read sensors

机译:介质杂散场对电流垂直于平面的大磁阻自旋阀读取传感器电迁移特性的影响

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摘要

Effects of magnetic stray field retrieved from both longitudinal and perpendicular magnetic recording media (denoted by “media stray field”) on electromigration (EM) characteristics of current-perpendicular-to-plane (CPP) giant magnetoresistance spin-valve (GMR SV) read sensors have been numerically studied to explore the electrical and magnetic stability of the read sensor under real operation. The mean-time-to-failure (MTTF) of the CPP GMR SV read sensors was found to have a strong dependence on the physical parameters of the recording media and recorded information status, such as the pulse width of media stray field, the bit length, and the head moving velocity. According to the numerical calculation results, it was confirmed that in the longitudinal media, the shorter the stray field pulse width (i.e., the sharper the media transition) allows for the longer MTTF of the CPP GMR SV read sensors; while in the perpendicular media, the sharper the media transition gives rise to a shorter MTTF. Interestingly, it was also revealed that the MTTF could be improved by reducing the bit length as well as increasing the head velocity in both longitudinal and perpendicular media. Furthermore, the bit distribution patterns, especially the number of consecutive ‘0’ bits strongly affected the MTTF of GMR SV read sensors. The strong dependences of MTTF on the media stray field during CPP GMR SV sensor operation are thought to be mainly attributed to the thermal cycling (temperature rise and fall) caused by the resistance change due to GMR effects.
机译:从纵向和垂直磁记录介质(由“介质杂散场”表示)获取的磁杂散场对读取的电流垂直于平面(CPP)巨磁电阻自旋阀(GMR SV)的电迁移(EM)特性的影响对传感器进行了数值研究,以探索实际操作下读取传感器的电气和磁稳定性。发现CPP GMR SV读取传感器的平均故障时间(MTTF)与记录介质的物理参数和所记录的信息状态(例如介质杂散场的脉冲宽度,长度和头部移动速度。根据数值计算结果证实,在纵向介质中,杂散场脉冲宽度越短(即介质过渡越尖锐),则可使CPP GMR SV读取传感器的MTTF更长;而在垂直介质中,介质过渡越尖锐,MTTF越短。有趣的是,还揭示出可以通过减小位长以及增加纵向和垂直介质的磁头速度来改善MTTF。此外,位分配模式(尤其是连续的“ 0”位的数量)严重影响了GMR SV读取传感器的MTTF。在CPP GMR SV传感器操作期间,MTTF对介质杂散场的强烈依赖性被认为主要归因于由GMR效应引起的电阻变化引起的热循环(温度上升和下降)。

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  • 来源
    《Journal of Applied Physics》 |2012年第9期|p.1-10|共10页
  • 作者

    Gui Zeng Ding;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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