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首页> 外文期刊>Journal of Applied Physics >DNA-modified silicon nanocrystals studied by X-ray luminescence and X-ray absorption spectroscopies: Observation of a strong infra-red luminescence band
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DNA-modified silicon nanocrystals studied by X-ray luminescence and X-ray absorption spectroscopies: Observation of a strong infra-red luminescence band

机译:X射线发光和X射线吸收光谱研究的DNA修饰的硅纳米晶体:观察到强红外发光带

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Silicon nanocrystals (SiNCs) modified with 18-mer DNA oligonucleotides have been studied by X-ray excited optical luminescence (XEOL) and X-ray absorption spectroscopy (XAS) in photoluminescence yield (PLY) and total electron yield (TEY) modes. Luminescence spectra from the DNA-modified SiNCs under X-ray excitation display distinct differences from simple alkyl terminated SiNCs. The DNA-modified SiNCs show strong luminescence at 540 ± 10 nm under vacuum ultraviolet excitation which is assigned to nitrogen 1s – σ* transitions within the DNA bases. Under excitation at 130 eV the PLY spectra from the same samples show the native nanocrystal ultraviolet emission band is suppressed, and the strongest emission peak is red shifted from 430 ± 10 nm to 489 ± 10 nm which we attribute to base nitrogen 1s transitions. In addition, a strong emission band in the infrared region at 815 ± 10 nm is observed. This clearly resolved strong IR band from the DNA-modified SiNCs may provide a useful luminescence signature in cell-labeling techniques and open up a range of applications for invivo assays.
机译:已经通过X射线激发光致发光(XEOL)和X射线吸收光谱(XAS)以光致发光产率(PLY)和总电子产率(TEY)模式研究了用18-mer DNA寡核苷酸修饰的硅纳米晶体(SiNC)。在X射线激发下,DNA修饰的SiNC的发光光谱显示出与简单的烷基封端的SiNC明显不同。经DNA修饰的SiNC在真空紫外线激发下在540±10 nm处显示强发光,这归因于DNA碱基内的1s-σ*跃迁。在130 eV激发下,来自相同样品的PLY光谱显示出天然纳米晶体紫外发射带受到抑制,并且最强的发射峰从430±10 nm红移到489±10 nm,这归因于碱氮1s跃迁。另外,在815±10nm的红外区域观察到强发射带。来自DNA修饰的SiNC的清晰可见的强IR带可能在细胞标记技术中提供有用的发光特征,并为体内测定打开了一系列应用。

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