Electric transport and field-induced properties in ZnO/La0.4Gd0.1Sr0.5CoO3/Si heterostructure

摘要

A heterostructure consisting of ZnO and La0.4Gd0.1Sr0.5CoO3 (LGSCO) was fabricated by pulsed laser deposition. The ZnO/La0.4Gd0.1Sr0.5CoO3 has been investigated and found to exhibit a slightly rectifying behavior. Additionally, the dominant leakage mechanism of our sample had been examined and proved to be caused by Poole-Frenkel emission. The resistance decreased with an increase in temperature, 1.18 × 106 Ω for 80 K and 5.14 × 105 Ω for 300 K, which demonstrates semiconductivity. We also observed a positive magnetoresistance that initially increased, but later showed a consequential decrease as temperature increased in our heterostructure under an external magnetic field.