Temperature-dependent polarization back-switching and dielectric nonlinearity in PbZr0.4Ti0.6O3 ferroelectric thin films

摘要

Temperature-dependent domains back-switching behavior and nonlinear dielectric response were studied in 200 nm fresh and aged PbZr0.4Ti0.6O3 thin films to compare domain walls motion under large and small signals. Expected thermally activation of domains back-switching and dielectric nonlinearity were observed at low temperature, however, abnormal thermally inhibited behavior occurred at higher temperatures. Such phenomenon was found in both fresh and aged films and the ageing process magnified such thermally inhibited effect. Analyzing nonlinear dielectric response with Rayleigh law suggested that the interaction between domain walls and pinning centers was strengthened at high temperature especially after ageing. Promoted pinning effect by rising temperature could reduce dielectric loss and this is practical for high temperature applications of ferroelectrics.