With the rise of big data handling, new solutions are required to drive cryptographic algorithms for maintaining data security. Here, we exploit the nonvolatile, nonlinear resistance change in BiFeO3 memristors [Shuai et al., J. Appl. Phys. 109, 124117 (2011)] by applying a voltage for the generation of second and higher harmonics and develop a new memristor-based encoding system from it to encrypt and obfuscate data. It is found that a BiFeO3 memristor in high and low resistance state can be used to generate two clearly distinguishable sets of second and higher harmonics as recently predicted theoretically [Cohen et al., Appl. Phys. Lett. 100, 133109 (2012)]. The computed autocorrelation of encrypted data using higher harmonics generated by a BiFeO3 memristor shows that the encoded data distribute randomly.
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机译：随着大数据处理的兴起，需要新的解决方案来驱动加密算法以维护数据安全性。在这里，我们利用BiFeO3忆阻器中的非易失性，非线性电阻变化[Shuai et al。，J. Appl。物理109，124117（2011）]，通过施加电压以产生二次谐波和更高次谐波，并从中开发出一种新的基于忆阻器的编码系统来对数据进行加密和混淆。发现，如理论上最近预测的那样，处于高电阻状态和低电阻状态的BiFeO 3忆阻器可用于产生两组明显不同的二次谐波和更高次谐波[Cohen et al。，Appl.Appl。物理来吧100，133109（2012）]。使用BiFeO3忆阻器产生的高次谐波计算出的加密数据的自相关性表明，编码数据是随机分布的。
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