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Ion distribution and ablation depth measurements of a fs-ps laser-irradiated solid tin target

机译:FS-PS激光照射固体锡靶的离子分布和消融深度测量

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摘要

The ablation of solid tin surfaces by a 800-nanometer-wavelength laser is studied for a pulse length range from 500 fs to 4.5 ps and a fluence range spanning from 0.9 to 22 J/cm2. The ablation depth and volume are obtained employing a high-numerical-aperture optical microscope, while the ion yield and energy distributions are obtained from a set of Faraday cups set up under various angles. We found a slight increase of the ion yield for an increasing pulse length, while the ablation depth is slightly decreasing. The ablation volume remained constant as a function of pulse length. The ablation depth follows a two-region logarithmic dependence on the fluence, in agreement with the available literature and theory. In the examined fluence range, the ion yield angular distribution is sharply peaked along the target normal at low fluences but rapidly broadens with increasing fluence. The total ionization fraction increases monotonically with fluence to a 5%-6% maximum, which is substantially lower than the typical ionization fractions obtained with nanosecond-pulse ablation. The angular distribution of the ions does not depend on the laser pulse length within the measurement uncertainty. These results are of particular interest for the possible utilization of fs-ps laser systems in plasma sources of extreme ultraviolet light for nanolithography.
机译:通过800纳米波长激光通过500 fs至4.5 ps的脉冲长度的脉冲范围和跨越0.9至22J / cm 2的流量范围的脉冲长度的消融。采用高数孔径光学显微镜获得的消融深度和体积,而离子产量和能量分布是从各种角度设置的一组法拉第杯中获得的。我们发现增加脉冲长度的离子产量略微增加,而消融深度略微降低。作为脉冲长度的函数,消融体积保持恒定。与可用的文献和理论一致,消融深度遵循对流量的两个区域对数依赖性。在检查的注速范围内,离子屈服角度分布在低分流量下沿着目标正常急剧达到尖锐,但随着量劲的增加而迅速拓宽。总电离馏分随着5%-6%的最大值而单调增加,其基本上低于用纳秒脉冲消融得到的典型电离级分。离子的角度分布不依赖于测量不确定性内的激光脉冲长度。这些结果对于可能利用FS-PS激光系统在纳米线切术的极端紫外光的等离子体源中可能的利用特别感兴趣。

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  • 来源
    《Journal of Applied Physics 》 |2017年第10期| 103301.1-103301.8| 共8页
  • 作者单位

    Advanced Research Center for Nanolithography (ARCNL) Science Park 110 1098 XG Amsterdam The Netherlands Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The Netherlands;

    Advanced Research Center for Nanolithography (ARCNL) Science Park 110 1098 XG Amsterdam The Netherlands;

    Advanced Research Center for Nanolithography (ARCNL) Science Park 110 1098 XG Amsterdam The Netherlands;

    Advanced Research Center for Nanolithography (ARCNL) Science Park 110 1098 XG Amsterdam The Netherlands;

    Advanced Research Center for Nanolithography (ARCNL) Science Park 110 1098 XG Amsterdam The Netherlands Van der Waals-Zeeman Instituut University of Amsterdam Science Park 904 1098 XH Amsterdam The Netherlands;

    Advanced Research Center for Nanolithography (ARCNL) Science Park 110 1098 XG Amsterdam The Netherlands;

    AMOLF Science Park 104 1098 XG Amsterdam The Netherlands;

    Advanced Research Center for Nanolithography (ARCNL) Science Park 110 1098 XG Amsterdam The Netherlands Department of Physics and Astronomy Vrije Universiteit De Boelelaan 1081 1081 HV Amsterdam The Netherlands;

    Advanced Research Center for Nanolithography (ARCNL) Science Park 110 1098 XG Amsterdam The Netherlands Department of Physics and Astronomy Vrije Universiteit De Boelelaan 1081 1081 HV Amsterdam The Netherlands;

    Advanced Research Center for Nanolithography (ARCNL) Science Park 110 1098 XG Amsterdam The Netherlands Department of Physics and Astronomy Vrije Universiteit De Boelelaan 1081 1081 HV Amsterdam The Netherlands;

    Advanced Research Center for Nanolithography (ARCNL) Science Park 110 1098 XG Amsterdam The Netherlands Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The Netherlands;

    Advanced Research Center for Nanolithography (ARCNL) Science Park 110 1098 XG Amsterdam The Netherlands;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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