With the miniaturization of a solid device, quantum and interface effects become dominant not only in the static properties but also in the transport dynamics in the solid. Here we examine the dc conductance of a nanosolid by introducing the depression of the intra-atomic trapping potential in the surface skin [Sun, Phys. Rev. B 69, 045105 (2004)] as a perturbation to the conventional "quantum well" for tunneling electrons. It is derived that downshifts of the dc conductance peaks (that is, the incident energies for resonant tunneling) happens in an oscillatory way, depending on the strength of the perturbation. Besides, the downshifts of the peak positions due to the trapping potential well depression decrease as the size of the nanosolid is increased.
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机译：随着固体器件的小型化，量子和界面效应不仅在静态特性中占主导地位，而且在固体中的传输动力学中也占主导地位。在这里，我们通过引入表面皮肤内原子内捕获势的降低来检查纳米固体的直流电导率[Sun，Phys。 Rev. B 69，045105（2004）]作为对电子隧穿的常规“量子阱”的扰动。可以得出，取决于扰动的强度，直流电导峰的降档（即共振隧穿的入射能量）以振荡方式发生。此外，随着纳米固体的尺寸增加，由于俘获势阱下降而导致的峰位置的下移减小。
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