Design of the tunnel contacts and the transport region of all-electrical spin-injection-detection devices

摘要

The design of an all-electrical spin-injection-detection device is discussed. It is shown that the use and the design of tunnel barriers cannot simply be copied from the spin light-emitting diodes, where they have already been demonstrated. Using one-dimensional and two-dimensional self-consistent simulations, the doping levels of the tunnel contacts and the spin-transport region are engineered to obtain an optimal tunnel barrier resistance and an optimal current distribution in the spin-transport region.