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Influence of hydrogenation on surface morphologies, transport, and optical properties of InN epifilms

机译:氢化对InN外延膜表面形貌,迁移和光学性质的影响

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摘要

We report the investigation of surface morphologies and transport and optical properties of hydrogenated InN epifilms. The average rms surface roughness decreases from 24 nm on the as-grown sample to 13.2 nm after hydrogenation. The free electron concentration can be increased or decreased depending on the duration of hydrogenation. The linewidth of the photoluminescence spectra can be reduced, and the peak intensity can be enhanced by about three times. All our results indicate that the physical properties of InN films can be improved by hydrogenation. Possible origins of the underlying mechanism have been proposed to explain the improvement.
机译:我们报告了氢化InN外延膜的表面形态和运输及光学性质的调查。平均均方根表面粗糙度从生长后的样品上的24 nm降低到氢化后的13.2 nm。取决于氢化的持续时间,自由电子浓度可以增加或减少。可以减小光致发光光谱的线宽,并且可以将峰值强度提高大约三倍。我们所有的结果表明,氢化可以改善InN薄膜的物理性能。已经提出了潜在机制的起源来解释这种改进。

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