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Raman scattering from epitaxial HfN layers grown on MgO(001)

机译:在MgO(001)上生长的外延HfN层的拉曼散射

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摘要

Stoichiometric single-crystal HfN layers grown on MgO(001) are analyzed by Raman spectroscopy. Second-order Raman scattering predominates, but first-order modes in the acoustic and optical ranges are also visible. The latter indicates that the O_h symmetry of NaCl-structure HfN is broken. The large mass difference between Hf and N leads to a correspondingly large separation, 250 cm~(-1), between the first-order acoustic and optical bands. Within this gap, four Raman lines are clearly observed. The first three are the second-order transverse acoustic mode (240 cm~(-1)), the sum of the first-order transverse and longitudinal acoustic modes (280 cm~(-1)), and the second-order longitudinal acoustic mode (325 cm~(-1)). The fourth line at 380 cm~(-1) is identified as the difference between the first-order optical and acoustic modes. The observed first-order Raman scattering, as well as the width of the gap between the first-order acoustic and optical modes, is in good agreement with previously calculated HfN phonon density of states.
机译:通过拉曼光谱分析在MgO(001)上生长的化学计量的单晶HfN层。二阶拉曼散射占主导地位,但在声学和光学范围内的一阶模式也是可见的。后者表明破坏了NaCl结构HfN的O_h对称性。 Hf和N之间的质量差较大,导致一阶声带和光学带之间的间隔较大,为250 cm〜(-1)。在此间隙内,可以清楚地观察到四根拉曼线。前三个是二阶横向声模(240 cm〜(-1)),一阶横向和纵向声模的总和(280 cm〜(-1))和二阶纵向声模模式(325 cm〜(-1))。 380 cm〜(-1)处的第四条线被识别为一阶光学模式和声学模式之间的差异。观测到的一阶拉曼散射以及一阶声模和光学模之间的间隙宽度与先前计算的HfN声子态密度很好地吻合。

著录项

  • 来源
    《Journal of Applied Physics》 |2006年第4期|p.043507.1-043507.4|共4页
  • 作者单位

    Department of Materials Science and the Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;计量学;
  • 关键词

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