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首页> 外文期刊>Journal of Applied Physics >Investigations of the effects of tempering and composition dependence on charge carrier field effect mobilities in polymer and fullerene films and blends
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Investigations of the effects of tempering and composition dependence on charge carrier field effect mobilities in polymer and fullerene films and blends

机译:研究温度和成分对聚合物和富勒烯薄膜及共混物中电荷载流子场迁移率的影响

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摘要

In this study we report on field effect mobilities of charge carriers in materials used in polymer photovoltaics. The field effect mobilities of charge carriers in polymer and fullerene films and in various blend compositions were investigated for the effects of tempering. Contact resistances were considered for more accurate mobility estimations. The field effect mobilities of holes in films of the conjugated polymer poly(3-hexylthiophene) (P3HT) were found to be in the 10~(-3) cm~2/V s range and the field effect mobilities of electrons in films of the methanofullerene [6,6]-phenyl C_(61)-butyric acid methyl ester (PCBM) were found to be in the order of 10~(-2) cm~2/V s. The concentration of PCBM was then varied in P3HT:PCBM blends, and blend compositions with PCBM contents of 0%, 33%, 40%, 50%, 60%, 67%, and 100% weight percents were measured before and after tempering. Electron mobilities were not detected in untempered blend compositions with PCBM content lower than 67% PCBM. Tempering led to a large increase in the electron mobility in the blends, and electron mobilities were detected in all tempered blends with PCBM content above 40%. Electron and hole field effect mobilities were found to be roughly balanced in the 10~(-3) cm~2/V s range for the tempered blend with 67% PCBM content.
机译:在这项研究中,我们报告了聚合物光伏材料中电荷载流子的场效应迁移率。研究了聚合物和富勒烯薄膜以及各种共混物组合物中电荷载体的场效应迁移率的影响。为了更准确地估计迁移率,考虑了接触电阻。发现共轭高分子聚(3-己基噻吩)(P3HT)薄膜中空穴的场效应迁移率在10〜(-3)cm〜2 / V s范围内,电子在薄膜中的场效应迁移率在10〜(-3)cm〜2 / V s范围内。甲烷富勒烯[6,6]-苯基C_(61)-丁酸甲酯(PCBM)约为10〜(-2)cm〜2 / V s。然后在P3HT:PCBM混合物中改变PCBM的浓度,并在回火前后测量PCBM含量为0%,33%,40%,50%,60%,67%和100%重量百分比的混合物组成。在PCBM含量低于67%PCBM的未回火共混组合物中未检测到电子迁移率。回火导致共混物中电子迁移率大大提高,并且在所有PCBM含量高于40%的回火共混物中均检测到电子迁移率。对于PCBM含量为67%的回火共混物,电子和空穴场迁移率在10〜(-3)cm〜2 / V s范围内大致平衡。

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