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首页> 外文期刊>Journal of Applied Physics >Strontium-modified lead zirconate titanate thin films for electrically tunable device applications
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Strontium-modified lead zirconate titanate thin films for electrically tunable device applications

机译:锶改性钛酸锆钛酸铅薄膜,用于电子可调器件应用

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Strontium-modified lead zirconate titanate Pb_(1-x)Sr_xZr_(0.52)Ti_(0.48)O_3 [(PSZT) x=0.2-0.8] thin films were prepared on Pt/TiO_2/SiO_2/Si substrates by the sol-gel method. The Curie temperature of PSZT films decreases with the increase of Sr contents and paraelectric PSZT films at room temperature are demonstrated as x approaches 0.4. The increase of Sr contents also leads to the simultaneous decrease of dielectric constant, tunability, and dielectric loss. The composition dependence of Curie temperature and tunability can be attributed to the shrinkage of crystal lattice due to a Sr addition. PSZT films with x=0.6 show the largest figure of merit of 24 with a moderate tunability of 48% and a dielectric loss of 0.02. This suggests that Sr-modified PZT is a potential candidate for voltage tunable applications.
机译:通过溶胶-凝胶法在Pt / TiO_2 / SiO_2 / Si衬底上制备锶修饰的钛酸锆钛酸铅Pb_(1-x)Sr_xZr_(0.52)Ti_(0.48)O_3 [(PSZT)x = 0.2-0.8]薄膜。 PSZT薄膜的居里温度随Sr含量的增加而降低,室温下的顺电PSZT薄膜的x值接近0.4。 Sr含量的增加还导致介电常数,可调谐性和介电损耗的同时降低。居里温度和可调谐性的成分依赖性可以归因于由于添加Sr而导致的晶格收缩。 x = 0.6的PSZT膜具有24的最大品质因数,中等可调性为48%,介电损耗为0.02。这表明Sr修饰的PZT是电压可调应用的潜在候选者。

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