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首页> 外文期刊>Journal of Applied Physics >Power factor enhancement in a magnetic field using polycrystalline bismuth microwire arrays
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Power factor enhancement in a magnetic field using polycrystalline bismuth microwire arrays

机译:使用多晶铋微丝阵列增强磁场中的功率因数

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Measurements of the magneto-Seebeck coefficient and magnetoresistivity of two bismuth microwire arrays having different diameters and a bulk sample were performed for applied magnetic fields between 0 and 2 T and temperatures between 50 and 300 K. The magneto-Seebeck coefficients were always enhanced as a result of controlling the phonon scattering process and the magnetoresistivity also invariably increased. The power factors in an applied magnetic field were estimated, and the power factors of the microwire arrays were found to be enhanced over the whole measurement range. By contrast, the power factor of the bulk sample was not enhanced at temperatures under 200 K. The difference in the responses of the bulk sample and the microwire arrays is strongly related to suppression of the magnetoresistivity; the suppression ratios of the magnetoresistivity of the bulk sample, which has a low aspect ratio, are smaller than those of the microwire arrays. It was experimentally demonstrated that there is an optimum magnetic field that maximizes the power factor and that the enhancement ratio of the power factor is much greater for structures that have a high aspect ratio, such as microwire arrays. This suggests that microwire arrays are suitable for enhancing the power factor by applying a magnetic field.
机译:对于施加的0至2 T的磁场和50至300 K的温度,对具有不同直径的两个铋微丝阵列和大量样品的磁塞贝克系数和磁电阻率进行了测量。控制声子散射过程的结果和磁阻也总是增加。估算了施加磁场中的功率因数,发现微线阵列的功率因数在整个测量范围内都有所提高。相反,在200 K以下的温度下,块状样品的功率因数并未提高。块状样品与微线阵列的响应差异与磁阻的抑制密切相关;长宽比低的块状样品的磁阻抑制率比微线阵列的抑制率小。实验证明,存在一个最佳磁场,该磁场可使功率因数最大化,并且对于具有高纵横比的结构(如微线阵列),功率因数的增强率要大得多。这表明微线阵列适合于通过施加磁场来提高功率因数。

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