...
机译:离子注入和脉冲激光熔融合成的GaN_xAs_(1-x)的肖特基势垒高度和能隙能的成分依赖性
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA;
National Renewable Energy Laboratory, Golden, Colorado 80401, USA;
Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA;
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA;
机译:基于离子注入和脉冲激光熔化合成的GaN_xAs_(1-x)的肖特基光电二极管的室温光响应
机译:通过离子注入和脉冲激光熔化合成的铁磁Ga_(1-x)Mn_xAs和Ga_(1-x)Mn_xP中的非磁性补偿
机译:基于离子注入和脉冲激光熔化合成的GaNxAs1-x的肖特基光电二极管的室温光响应
机译:通过金属机组生长的GaN(x <= 0.15)上的in_xga_(1-x)n层的带隙能量的组成依赖性
机译:通过离子注入和脉冲激光熔化合成的III-锰-钒铁磁半导体。
机译:硅和锗对硅和锗的肖特基势垒高度的面依赖性
机译:化学刻蚀的In_(x)Ga_(1-x)P表面上Au的肖特基势垒高度的成分依赖性