We have grown tungsten-containing films by focused-ion-beam (FIB)-induced chemical vapor deposition. The films lie close to the metal-insulator transition with an electrical conductivity which changes by less than 5% between room temperature and 7 K. The superconducting transition temperature T_c of the films can be controlled between 5.0 and 6.2 K by varying the ion-beam deposition current. The T_c can be correlated with how far the films are from the metal-insulator transition, showing a nonmonotonic dependence, which is well described by the heuristic model of [Osofsky et al., Phys. Rev. Lett. 87, 197004 (2001)]. Our results suggest that FIB direct-writing of W composites might be a potential approach to fabricate mask-free superconducting devices as well as to explore the role of reduced dimensionality on superconductivity.
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