Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates

摘要

GaSb and InSb epilayers grown on GaAs (001) vicinal substrates misoriented toward (111) plane were studied using high resolution x-ray diffraction. The results show that GaSb and InSb epilayers take on positive crystallographic tilt, and the asymmetric distribution of 60° misfit dislocations in {111} glide planes have an effect on the tilt. In addition, the vicinal substrate influences the distribution of the threading dislocations in {111} glide planes, and the density of dislocation in the (111) plane is higher than in the (111) plane. A model was proposed to interpret the distribution of full width at half maximum, which can help us understand the formation and glide process of the dislocations.