Modeling Of Degradation Behavior Of Ingap/gaas/ge Triple-junction Space Solar Cell Exposed To Charged Particles

摘要

Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) space solar cells, which are exposed to charged particles (protons and electrons), is introduced using a one-dimensional optical device simulator: PC1D. The proposed method can reproduce the electrical degradation of 3J solar cells from fitting the external quantum efficiencies for subcells. In this modeling, carrier removal rate of base layer (R_c) and damage coefficient of minority carrier diffusion length (K_L) in each subcell are considered as radiation degradation parameters. Nonionizing energy loss (NIEL) analysis for both radiation degradation parameters is discussed. The radiation degradation of a 3J solar cell can be predicted from the results of degradation level in the each subcell estimated from correlativity between NIEL and both radiation degradation parameters.