Tunability of magnetization in lateral few electron double quantum dots

摘要

We demonstrate theoretically a pathway for electrical control of magnetic properties of tunable lateral double InAs quantum dots containing two-electrons, subjected to spin-orbit interaction (SOI), vertical electrical and magnetic fields. In the regime of low temperature and weak magnetic field, interplay of interdot tunnel coupling and hybridized magnetoelectric effect induces V-like behavior of magnetization and a peak of susceptibility which are very sensitive to interdot barrier voltage (V_B) and interdot distance (d). Sweeping V_B and adjusting d not only impact magnetic phase transition, but also switch electronic and magnetic properties from atomic to molecular in nature. Furthermore, SOI broadens the magnetic field interval of paramagnetic phase and changes magnitude of magnetization and susceptibility.