Monte Carlo study of the electrothermal phenomenon in silicon-on- insulator and silicon-germanium-on-insulator metal-oxide field-effect transistors

摘要

Self-heating effects are investigated in silicon-on-insulator (SOI), silicon-germanium-on-insulator (SGOI), and strained-silicon-directly-on-insulator (SSDOI) metal-oxide field-effect transistors (MOSFETs), using a Monte Carlo simulator self-consistently coupled with the solution of the heat diffusion equation. Although the influence of thermal effects is in general higher in these structures, as compared to bulk Si MOSFETs, its impact is much more important in SGOI and SSDOI FET structures incorporating ultrathin Si channels, with SGOI FETs giving the worst thermal performance. A study of the dependence of the extent of self-heating on the buried-oxide thickness is also performed, showing that this parameter is important in designing SOI structures with better thermal management.