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首页> 外文期刊>Journal of Applied Physics >Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co_(20)Fe_(60)B_(20)-MgO structure
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Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co_(20)Fe_(60)B_(20)-MgO structure

机译：Co_（20）Fe_（60）B_（20）-MgO结构中磁各向异性对MgO厚度和缓冲层的依赖性

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摘要

We investigated the dependence of perpendicular magnetic anisotropy in CoFeB-MgO on the MgO layer thickness. Magnetization curves show that a clear perpendicular magnetic easy axis is obtainable in a 1.5-nm thick CoFeB layer by depositing MgO of more than three monolayers. We investigated anisotropy in CoFeB-MgO deposited on four different buffer layers. Results show that a counter interface of CoFeB-nonmagnetic metal affects the perpendicular anisotropy of CoFeB/ MgO.
机译：我们研究了CoFeB-MgO中垂直磁各向异性对MgO层厚度的依赖性。磁化曲线表明，通过沉积三层以上的MgO，可以在1.5 nm厚的CoFeB层中获得清晰的垂直磁易轴。我们研究了沉积在四个不同缓冲层上的CoFeB-MgO中的各向异性。结果表明，CoFeB-非磁性金属的反向界面影响CoFeB / MgO的垂直各向异性。

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  • 来源
    《Journal of Applied Physics》 |2011年第3期|p.07C712.1-07C712.3|共3页
  • 作者

    M. Yamanouchi; R. Koizumi; S. Ikeda; H. Sato; K. Mizunuma; K. Miura; H. D. Gan; F. Matsukura; H. Ohno;

  • 作者单位

    Center for Spintronics Integrated Systems, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577,Japan;

    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

    Center for Spintronics Integrated Systems, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577,Japan,Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

    Center for Spintronics Integrated Systems, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577,Japan;

    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

    Center for Spintronics Integrated Systems, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577,Japan,Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan,Advanced Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Center for Spintronics Integrated Systems, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577,Japan;

    Center for Spintronics Integrated Systems, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577,Japan,Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

    Center for Spintronics Integrated Systems, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577,Japan,Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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