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首页> 外文期刊>Journal of Applied Physics >Phase transformation, dielectric and magnetic properties of Nb doped Bi_(0.8)Sr_(0.2)FeO_3 multiferroics
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Phase transformation, dielectric and magnetic properties of Nb doped Bi_(0.8)Sr_(0.2)FeO_3 multiferroics

机译:Nb掺杂Bi_(0.8)Sr_(0.2)FeO_3多铁的相变,介电和磁性能

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摘要

Bi_(0.8)Sr_(0.2)Fe_(1-x)Nb_xO_3 (x = 0.0, 0.05, and 0.10) multiferroics were prepared by solid state reaction method. X-ray diffraction and Rietveld analysis show that crystal structure is rhombohedral for x = 0.0, 0.05 samples and triclinic for x = 0.10 sample. These samples showed dispersion in dielectric constant (ε) and dielectric loss (tan 8) values at lower frequencies. For x = 0.05 sample, both e and tan 5 are lower than for Bi_(0.8)Sr_(0.2)FeO_3 sample indicating its high resistivity. For x = 0.10 sample, the value of e is enhanced which may be due to formation of stronger dipoles in triclinic structure. Temperature dependence of frequency exponent "s" of power law suggests that correlated barrier hopping (CBH) model is applicable at lower temperatures and quantum mechanical tunneling model is appropriate at higher temperatures for describing the conduction mechanism in x = 0.0 and x = 0.05 samples; while in x = 0.10 sample, CBH model is appropriate in studied temperature range. Significant enhancement observed in magnetization for x = 0.10 sample is due to the structural phase transition from rhombohedral to triclinic caused by Nb substitution. For this sample, values of remnant magnetization (M_r) and coercive field (H_c) are 0.155 emu/g and 2.695 kOe, respectively.
机译:通过固态反应法制备Bi_(0.8)Sr_(0.2)Fe_(1-x)Nb_xO_3(x = 0.0、0.05和0.10)多铁。 X射线衍射和Rietveld分析表明,对于x = 0.0、0.05样品,晶体结构是菱面体,对于x = 0.10样品,晶体结构是三斜晶体。这些样品在较低频率下表现出介电常数(ε)和介电损耗(tan 8)值的分散。对于x = 0.05样品,e和tan 5均低于Bi_(0.8)Sr_(0.2)FeO_3样品,表明其高电阻率。对于x = 0.10的样品,e的值会增加,这可能是由于在三斜结构中形成了较强的偶极子所致。幂律的频率指数“ s”的温度依赖性表明,相关势垒跳跃(CBH)模型适用于较低温度,而量子力学隧穿模型适用于较高温度,用于描述x = 0.0和x = 0.05样品中的传导机理;在x = 0.10的样本中,CBH模型适合于研究的温度范围。 x = 0.10样品的磁化强度显着提高是由于Nb取代引起的从菱面体到三斜晶的结构相变。对于此样本,剩余磁化强度(M_r)和矫顽场(H_c)的值分别为0.155 emu / g和2.695 kOe。

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  • 来源
    《Journal of Applied Physics》 |2012年第11期|p.113917.1-113917.7|共7页
  • 作者单位

    Department of Applied Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, Haryana, India;

    Department of Applied Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, Haryana, India;

    Department of Applied Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, Haryana, India;

    Department of Applied Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, Haryana, India;

    Department of Applied Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, Haryana, India;

    Department of Applied Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, Haryana, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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