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Magnetic and self-biased properties of highly oriented M-type barium ferrite films on Pt-coated Si substrate by magnetron sputtering

机译:磁控溅射在Pt包覆的Si衬底上高取向M型钡铁氧体薄膜的磁和自偏置特性

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摘要

Highly oriented M-type barium ferrite (BaM) thin films were deposited by sputtering on Pt-coated Si Substrate with different substrate temperatures. X-ray diffraction and atomic force microscopy results show that BaM films have crystal texture of c-axis grains perpendicular to film plane with apparent hexagonal morphology. On the other hand, it is clearly observed that the remanent magnetization (Mr) in out-plane is higher than those in in-plane, and the Mr in out-plane increases with increasing the substrate temperature, reaching maximum when substrate temperature (Ts) is 600 ℃. The hysteresis curves also indicate that the BaM thin film exhibits nice self-biased property with 4πMr of 3803.04 Gs, squareness ratio (Mr/Ms) of 0.96, and coercivity of 1767.3 Oe. These results make sure that these BaM films have potential for use in self-biasing microwave/millimeter wave magnetic devices such as circulators and isolators.
机译:通过溅射在具有不同衬底温度的Pt涂层Si衬底上沉积高取向M型钡铁氧体(BaM)薄膜。 X射线衍射和原子力显微镜结果表明BaM膜具有c轴晶粒垂直于膜平面的晶体织构,具有明显的六边形形态。另一方面,可以清楚地观察到,面外的剩余磁化强度(Mr)高于面内的剩余磁化强度(Mr),并且随着基板温度的升高,面外的Mr增大,当基板温度(Ts )是600℃。磁滞曲线还表明,BaM薄膜具有良好的自偏压特性,其4πMr为3803.04 Gs,矩形比(Mr / Ms)为0.96,矫顽力为1767.3 Oe。这些结果确保了这些BaM膜具有用于自偏置微波/毫米波磁性设备(例如循环器和隔离器)的潜力。

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  • 来源
    《Journal of Applied Physics》 |2013年第2期|17B306.1-17B306.3|共3页
  • 作者单位

    State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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