The manipulation of magnetic properties by resistive switching effect in CeO_2/La_(0.7)(Sr_(0.1)Ca_(0.9))_(0.3)MnO_3 system

摘要

The bipolar resistance switching behavior was observed in the epitaxially grown CeO_2/ La_(0.7)(Sr_(0.1)Ca_(0.9))_(0.3)MnO_3 (CeO_2/LSCMO) heterojunctions on SrTiO_3 substrate using pulsed laser deposition technology. It was found that the magnetization of CeO_2/LSCMO heterojunction varies with the resistance state of the device when the external triggered voltage is higher than the set and reset voltages. The magnetization could be reversibly changed by exerting external set and reset voltages on the junction. The electron tunneling accompanied by a trapping/detrapping process at the interface is likely responsible for the modulation of the magnetization in this insulator/ manganite device.