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Modeling of the infrared photodetector based on multi layer armchair graphene nanoribbons

机译:基于多层扶手椅石墨烯纳米带的红外光电探测器建模

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摘要

Armchair graphene nanoribbons (A-GNRs), an alternative material for Infrared (IR) photodetectors, attract more attention because of those tunable energy gaps by changing the width of nanoribbons and the height of interband transition. In this paper, we calculate the dark current limited detectivity, D*, of the multi layer A-GNR based IR photodetector. For this purpose, we find the band structure of A-GNRs by tight-binding model and by considering the edge deformation, the absorption coefficient using the single electron approximation, the quantum efficiency, and the optical responsivity of photodetector. Then, the dark current of photodetector has been calculated by considering two contributions: (i) The interband tunneling generation and (ii) the thermogeneration due to the optical and acoustic phonon and line edge roughness (LER) scattering in the A-GNRs. Finally, we optimize the dark current limited detectivity of the photodetector for different structural parameters. The obtained results show that for the single layer A-GNR based photodetector with W = 5nm, L = 20μm, Vb = 2V, Vg = 2V, maximum value of dark current limited detectivity, D*, at T = 300K is ~ 2.2 × 108 (cm Hz1/2/W) and at T = 77K is ~ 2.1 × 1011 (cm Hz1/2/W). Also, for narrow A-GNRs, D* increases with increasing the gate voltage, while for wider A-GNRs decreases with increasing the gate voltage. Moreover, the dark current limited detectivity increases with increasing the number of the A-GNR layers.
机译:扶手椅石墨烯纳米带(A-GNRs)是红外(IR)光电探测器的替代材料,由于通过改变纳米带的宽度和带间跃迁的高度而具有可调节的能隙,因此引起了更多关注。在本文中,我们计算了基于多层A-GNR的红外光电探测器的暗电流限制检测率D *。为此,我们通过紧密结合模型并考虑边缘变形,使用单电子近似的吸收系数,量子效率和光电探测器的光学响应性,找到了A-GNR的能带结构。然后,通过考虑以下两个因素来计算光电探测器的暗电流:(i)带间隧穿的产生和(ii)由于光学声声子和声子和线边缘粗糙度(LER)在A-GNR中的散射而引起的热产生。最后,针对不同的结构参数,我们优化了光电探测器的暗电流限制检测率。获得的结果表明,对于W = 5nm,L =20μm,Vb = 2V,Vg = 2V的单层基于A-GNR的光电探测器,在T = 300K时暗电流限制检出率D *的最大值为〜2.2× 108(cm Hz1 / 2 / W)和在T = 77K时约为2.1×1011(cm Hz1 / 2 / W)。同样,对于窄的A-GNR,D *随着栅极电压的增加而增加,而对于较宽的A-GNR,随着栅极电压的增加而减小。此外,随着A-GNR层数的增加,暗电流限制的检测率增加。

著录项

  • 来源
    《Journal of Applied Physics》 |2013年第9期|093106.1-093106.7|共7页
  • 作者

    E. Ahmadi; A. Asgari;

  • 作者单位

    Faculty of Physics, University of Tabriz, Tabriz, Iran Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51665-163, Iran;

    Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51665-163, Iran School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley,WA 6009, Australia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:09:59

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