Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices

摘要

We reexamined curve-fitting analysis for spin-accumulation signals observed in Si-channel spin-accumulation devices, employing widely-used Lorentz functions and a new formula developed from the spin diffusion equation. A Si-channel spin-accumulation device with a high quality ferromagnetic spin injector was fabricated, and its observed spin-accumulation signals were verified. Experimentally obtained Hanle-effect signals for spin accumulation were not able to be fitted by a single Lorentz function and were reproduced by the newly developed formula. Our developed formula can represent spin-accumulation signals and thus analyze Hanle-effect signals.