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机译:Bi:YIG薄膜在低温下制备的磁光可视化
Department of Physics and Basic Science Institute for Cell Damage Control, Sogang University, Seoul 121-742, South Korea;
Department of Physics and Basic Science Institute for Cell Damage Control, Sogang University, Seoul 121-742, South Korea;
Department of Radiophysics, Yerevan State University, Yerevan 0025, Armenia;
Institute of Radiophysics and Electronics, Ashtarak 0203, Armenia;
Department of Physics, Sam Houston State University, Huntsville, Texas 77341, USA;
Department of Physics and Basic Science Institute for Cell Damage Control, Sogang University, Seoul 121-742, South Korea;
机译:Bi-YIG薄膜的磁光特性与退火后温度的关系
机译:通过金属有机分解在二氧化硅上制备的Bi:Yig薄膜的限制
机译:通过不同共沉淀程序制备的Bi-YIG颗粒复合薄膜的磁光性能
机译:重掺杂铋代钇铁石榴石(Bi:YIG)薄膜的磁和磁光性能研究
机译:在超导体-绝缘体转变附近的低温和高磁场下,a铋超薄膜的电传输。
机译:Bi-YIG薄膜中的稳健纵向自旋塞贝克效应
机译:通过不同的共沉淀方法制备的Bi-yig颗粒复合膜的磁光性能。