Electrical properties of in-plane-implanted graphite nanoribbons

摘要

We studied the effect of low energy (30 keV) ionic implantation of Ga~+ in the direction parallel to the graphene planes (perpendicular to the c-axis) in oriented graphite ribbons with widths around 500 nm. Our experiments have reproducibly shown a reduction of electrical resistance upon implantation consistent with the occurrence of ionic channeling in our devices. Our results allow for new approaches in the modulation of the charge carrier concentration in mesoscopic graphite.