A SnS_2-based photomemristor driven by sun

摘要

We demonstrate experimentally that a sample of a SnS_2 layered semiconductor compound with the area of 1 cm~2 and the thickness of 100 μm, contacted laterally by silver electrodes with the area of 1 mm~2, acts naturally as a memristor device when illuminated by a sun simulator. Although the conductance of the device changes with the number of pulses or voltages sweeps, the current-voltage dependence is almost linear, showing only a very narrow but clearly pinched hysteresis, which is the main imprint of a memristor. This SnS_2-based solid-state miniaturized photomemristor could be used for the implementation of all-optical neuromorphic circuits based on artificial neurons and synapses, oriented to learning algorithms of living organisms.