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Highly Efficient Metal-Free Growth of Nitrogen-Doped Single-Walled Carbon Nanotubes on Plasma-Etched Substrates for Oxygen Reduction

机译:在等离子刻蚀基板上高效高效地无氮掺杂氮的单壁碳纳米管,以减少氧气

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摘要

We have for the first time developed a simple plasma-etching technology to effectively generate metal-free particle catalysts for efficient metal-free growth of undoped and/or nitrogen-doped single-walled carbon nanotubes (CNTs). Compared with undoped CNTs, the newly produced metal-free nitrogen-containing CNTs were demonstrated to show relatively good electrocatalytic activity and long-term stability toward oxygen reduction reaction (ORR) in an acidic medium. Owing to the highly generic nature of the plasma etching technique, the methodology developed in this study can be applied to many other substrates for efficient growth of metal-free CNTs for various applications, ranging from energy related to electronic and to biomedical systems.
机译:我们首次开发了一种简单的等离子体蚀刻技术,可以有效地生成不含金属的颗粒催化剂,从而实现无掺杂和/或氮掺杂的单壁碳纳米管(CNT)的高效无金属生长。与未掺杂的CNT相比,新生产的不含金属的含氮CNT在酸性介质中表现出相对较好的电催化活性和对氧还原反应(ORR)的长期稳定性。由于等离子刻蚀技术的高度通用性,本研究开发的方法可以应用于许多其他基材,以有效生长无金属的CNT,以用于各种应用,涉及与电子和生物医学系统相关的能量。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2010年第43期|p.15127-15129|共3页
  • 作者

    Dingshan Yu and Liming Dai;

  • 作者单位

    Department of Chemical Engineering, Case Western Reserve University, Cleveland, Ohio 44106;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 00:50:22

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