Fabrication of p-Type Li-Doped ZnO Films by RF Magnetron Sputtering

摘要

The p-type Li-doped ZnO films are successfully deposited on a glass substrate by RF magnetron sputtering at room temperature. The pure, crystalline sputtering target of Li_XZn_(1-x)O_(1-X/2) with X in the range of 0-0.003 is fabricated using the powder synthesized by the thermal decomposition of a metal-nitrate-tartrate gel complex at 400°-800℃. The complex is prepared by dissolving nitrates of zinc and lithium in an aqueous solution with nitric and tartaric acids. The resulting compacts, which can be densified at 1400℃, exhibit a decreasing trend of electrical resistivity with increasing Li content. For the composition with 0.2 mol% Li, the p-type Li-doped ZnO film has an electrical resistivity of 1.3 Ω·cm, Hall mobility of 0.77 cm~2·(V·s)~(-1), carrier concentration of 6.67 × 10~(18) cm~(-3), and high optical transmittance in the visible region.