Dip-Pen Lithography of BiFeO_3 Nanodots

摘要

We demonstrate the dip-pen nanolithography (DPN) process of BiFeO_3 nanodots forming a nanodot at any desired position. The BiFeO_3 nanodots exhibited a size increment from 30 to 180 nm for the deposition time between 0.1 and 10 s. This position-controlled DPN using a silicon nitride cantilever produced an array of the ferroelectric nanodots with a minimum lateral dimension of about 30 nm on a Nb-doped SrTiO_3 substrate. We further confirmed canonical ferroelectric responses of the minimum-sized nanodot using piezoelectric force microscopy.