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A Low Sintering Temperature Low Loss Microwave Dielectric Material ZnZrNb_2O_8

机译:低烧结温度低损耗微波介电材料ZnZrNb_2O_8

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摘要

A low sintering temperature microwave dielectric material ZnZrNb_2O_3 was reported. It exhibits a monoclinic structure, belongs to the space group P2/c (C_(2h)~4), and Z = 1. The dielectric constant increased with increasing relative density. The Qf value increased with increasing packing fraction. The τ_f increased with increasing dielectric constant. The typical values of ZnZrNb_2O_8 were ε = 30, Qf= 61 000 GHz, τ_f=-52 × 10~(-6) ℃~(-1), sintered at 950℃.
机译:报道了一种低烧结温度的微波介电材料ZnZrNb_2O_3。它具有单斜晶结构,属于空间群P2 / c(C_(2h)〜4),Z =1。介电常数随相对密度的增加而增加。 Qf值随填充分数的增加而增加。 τ_f随着介电常数的增加而增加。 ZnZrNb_2O_8的典型值为ε= 30,Qf = 61 000 GHz,τ_f= -52×10〜(-6)℃〜(-1),在950℃下烧结。

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  • 来源
    《Journal of the American Ceramic Society》 |2012年第11期|3363-3365|共3页
  • 作者单位

    School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;

    School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;

    School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;

    School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;

    School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;

    School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-17 13:38:56

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