Three-fold improved set-voltage variability of a Cu atom switch with a split electrode for very-large-scale integration

摘要

We propose a self-selected smallest set-voltage cell (4S-cell) to realize three-fold improvement of the set-voltage (V-set) variability of Cu atom switches. In the cell, switches are connected in parallel and the switch with the smallest V-set is automatically selected, resulting in smaller V-set variability, For practical application a split-electrode structure is introduced. The 4S-cells of 2-in-1 by using a split electrode without any increase in cell area reduced the 6 sigma of V-set with an equivalent sigma V-set of 28 mV. The developed 4S-cell enables very-large-scale integration of atom switches for embedded memory and routing switch applications used in ultra-low-power systems-on-chips for wireless sensor node applications. (C) 2020 The Japan Society of Applied Physics