Modulation-Doped InGaAlAs/InP Semiconductor Optical Amplifier Structures Grown by Molecular Beam Epitaxy

摘要

Semiconductor optical amplifier (SOA) structures have been designed and grown by molecular beam epitaxy for multifunctional integration of 1.55-μm photonic devices on InP. Triple n-type modulation-doped, strain-balanced compact quantum wells (QWs) are designed to provide desirable gain characteristics under forward bias and clean index changes under reverse bias. The largest refractive index changes with low levels of electroabsorption have been obtained for a sample with modulation doping of 4.27 x 10~(11) cm~(-2) per QW and with a hole-stopping barrier.