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首页> 外文期刊>Japanese journal of applied physics >Improvement in Resonant Frequency of Magnetic Domain Wall Displacement in Soft Magnetic Thin Films by Slit Patterning
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Improvement in Resonant Frequency of Magnetic Domain Wall Displacement in Soft Magnetic Thin Films by Slit Patterning

机译:通过缝隙图案化改善软磁薄膜中磁畴壁位移的共振频率

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摘要

Soft magnetic thin films have the potential to enable reduction of the dimensions of inductors and high-frequency modules. However, the permeability in the magnetic easy axis direction in thin films with uniaxial anisotropy is too low to use in the MHz range owing to a resonance of magnetic domain wall displacement. In the case of spiral inductors using magnetic films with uniaxial anisotropy, since both easy and hard axes in the films are excited, the low permeability in the easy axis direction in the MHz range reduces the inductance of the devices. To improve the characteristics of magnetic thin-film inductors in the MHz range, it is important to control magnetic domain wall displacement and increase its resonant frequency in the magnetic easy axis direction. To control magnetic domain wall displacement in the magnetic easy axis direction, we fabricate a magnetic wire array by slit patterning perpendicular to the magnetic easy axis in CoZrTa thin films. We also discuss the effect of wire width on magnetic characteristics. Furthermore, we analyze the effect of the slit patterning on magnetic domain wall displacement using a motion equation of the magnetic domain wall.
机译:软磁薄膜具有降低电感器和高频模块尺寸的潜力。然而,由于磁畴壁位移的共振,具有单轴各向异性的薄膜在易磁化轴方向上的磁导率太低而不能在MHz范围内使用。在使用具有单轴各向异性的磁性膜的螺旋电感器的情况下,由于膜中的易轴和硬轴都被激发,因此在MHz范围内易轴方向上的低磁导率会降低器件的电感。为了改善MHz范围内的磁性薄膜电感器的特性,控制磁畴壁位移并增加其在磁易轴方向上的谐振频率非常重要。为了控制在磁易轴方向上的磁畴壁位移,我们通过在CoZrTa薄膜中垂直于磁易轴的狭缝构图来制造磁线阵列。我们还将讨论线宽对磁特性的影响。此外,我们使用磁畴壁的运动方程分析了缝隙图案对磁畴壁位移的影响。

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  • 来源
    《Japanese journal of applied physics 》 |2009年第8issue1期| 083001.1-083001.5| 共5页
  • 作者

    Taku Masai; Yoshitaka Kitamoto;

  • 作者单位

    Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan TDK Corporation, Ichikawa, Chiba 272-8558, Japan;

    Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan;

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